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BUV48I |
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| Part Number | BUV48I |
| Manufacturer | INCHANGE |
| Description | ·High Voltage Capability ·High Current Capability ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage,high... |
| Features |
s registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 2A
VCE (sat)-2 Collector-Emitter Saturation Voltage IC= 15A ;IB= 3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A; IB= 2A
ICBO
Collector Cutoff Current
VCB= 850V; IE= 0
ICEO
Collector Cutoff Current
VCE= 450V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V;... |
| Document |
 BUV48I Data Sheet
PDF 217.38KB |
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