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PHX7NQ60E |
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| Part Number | PHX7NQ60E |
| Manufacturer | Philips |
| Description | N-channel, enhancement mode field-effect power transistor. PHP7NQ60E in TO-220AB (SOT78) PHX7NQ60E in isolated TO-220AB. 3. Applications s s s s 4. Pinning information Table 1: Pin 1 Description gat... |
| Features |
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Product availability:
Philips Semiconductors
PHP7NQ60E; PHX7NQ60E
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Symbol VDS ID Tj RDSon Quick reference data Parameter drain-source voltage (DC) drain current (DC) junction temperature drain-source on-state resistance VGS =1 0V ; ID = 3.5 A Tj =2 5 °C Tj = 150 °C Conditions 25 °C ≤ Tj ≤ 150 °C Tc =2 5 °C; VGS =1 0V
[1]
Typ -7 0.94
Max 600 150 1.2
Unit V A °C Ω Ω
6. Limiting values
Table 3: Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-sou... |
| Document |
 PHX7NQ60E Data Sheet
PDF 105.01KB |
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