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IRG7IC28UPBF |
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| Part Number | IRG7IC28UPBF |
| Manufacturer | International Rectifier |
| Description | This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced TM rating per silicon area which improve panel trench IGBT technology to achieve low CE(on) ... |
| Features |
l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package
IRG7IC28UPbF
Key Parameters
600 1.70 225 150 V V A °C
VCE min VCE(ON) typ. @ IC = 40A IRP max @ TC= 25°C TJ max
c
C
G E
E C G
n-channel
G Gate C Collector
TO-220AB Full-Pak
E Emitter
Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced TM rating per silicon area which improve ... |
| Document |
 IRG7IC28UPBF Data Sheet
PDF 385.43KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | IRG7IC28U |
International Rectifier |
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|
| 2 | IRG7I313UPBF |
International Rectifier |
PDP TRENCH IGBT |
|
| 3 | IRG71C28U |
International Rectifier |
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|
| 4 | IRG7PG35U-EPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
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| 5 | IRG7PG35UPBF |
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INSULATED GATE BIPOLAR TRANSISTOR |
|
| 6 | IRG7PG42UD-EPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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