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IRLU2908PbF |
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| Part Number | IRLU2908PbF |
| Manufacturer | International Rectifier |
| Description | Specifically designed for Automotive applications, this HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of ... |
| Features |
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HEXFET® Power MOSFET
D
IRLR2908PbF IRLU2908PbF
VDSS = 80V RDS(on) = 28m Ω
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
G S
ID = 30A
Description
Specifically designed for Automotive applications, this HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved r... |
| Document |
 IRLU2908PbF Data Sheet
PDF 331.85KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRLU2908 |
International Rectifier |
POWER MOSFET |
|
| 2 | IRLU2908 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRLU2905 |
International Rectifier |
POWER MOSFET |
|
| 4 | IRLU2905PBF |
International Rectifier |
POWER MOSFET |
|
| 5 | IRLU2905Z |
International Rectifier |
POWER MOSFET |
|
| 6 | IRLU2905Z |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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