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MDP11N60 |
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| Part Number | MDP11N60 |
| Manufacturer | MagnaChip |
| Description | The MDP11N60 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP11N60 is suitable device for SMPS, high Speed swi... |
| Features |
VDS = 600V VDS = 660V ID = 11A RDS(ON) ≤ 0.55Ω
Applications
@ VGS = 10V @ VGS = 10V
Power Supply PFC High Current, High Speed Switching
GDS
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage
Characteristics
Continuous Drain Current (※)
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Symbol VDSS
VDSS @ Tjmax VGSS
ID
IDM
PD
Dv/dt EAS... |
| Document |
 MDP11N60 Data Sheet
PDF 1.15MB |
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Desde 2024. D4U Semiconductor.
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