MTP425I3 |
Part Number | MTP425I3 |
Manufacturer | CYStech Electronics |
Description | CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET Spec. No. : C391I3 Issued Date : 2012.11.27 Revised Date : Page No. : 1/8 MTP425I3 Features • Single Drive Requirement • Low On-resi... |
Features |
• Single Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free lead plating package BVDSS ID RDS(ON)@VGS=-10V, ID=-10A RDS(ON)@VGS=-5V, ID=-7A -30V -50A 10mΩ(typ) 14mΩ(typ) Symbol MTP425I3 Outline TO-251AB TO-251S G:Gate D:Drain S:Source G D S G D S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=-10V, TC=25°C Continuous Drain Current @VGS=-10V, TC=100°C Continuous Drain Current @VGS=-10V, TA=25°C Continuous Drain Current @VGS=-10V, TA=100°C Pulsed Drain Current TC=25℃ TC=... |
Document |
MTP425I3 Data Sheet
PDF 322.92KB |
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