OD-880F |
Part Number | OD-880F |
Manufacturer | OPTO DIODE |
Description | HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME OD-880F FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide ... |
Features |
• High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output • Hermetically sealed TO-46 package • Narrow angle for long distance applications .041 ANODE (CASE) .209 .220 .015 .183 .186 .152 .154 .100 .017 .030 .040 CATHODE .197 .205 .036 45° ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Radiant Intensity, Ie Peak Emission Wavelength, λP Spectral Bandwidth at 50%, Δλ Half Intensity Beam Angle, θ Forward Voltage, VF Reverse Breakdown Voltage, VR Capacitance, C Ri... |
Document |
OD-880F Data Sheet
PDF 239.51KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | OD-880-C |
OptoDiode |
HIGH-POWER GaAlAs IR EMITTER CHIPS | |
2 | OD-880E |
OptoDiode |
HIGH-POWER GaAlAs IR EMITTERS | |
3 | OD-880F |
OptoDiode |
HIGH-POWER GaAlAs IR EMITTERS | |
4 | OD-880FHT |
OPTO DIODE |
HIGH TEMPERATURE GaAlAs IR EMITTERS | |
5 | OD-880L |
OPTO DIODE |
HIGH-POWER GaAlAs IR EMITTERS | |
6 | OD-880L |
OptoDiode |
HIGH-POWER GaAlAs IR EMITTERS |