IRGSL4062DPBF International Rectifier Power MOSFET Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

IRGSL4062DPBF

International Rectifier
IRGSL4062DPBF
IRGSL4062DPBF IRGSL4062DPBF
zoom Click to view a larger image
Part Number IRGSL4062DPBF
Manufacturer International Rectifier
Description PD - 97355B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175...
Features









• Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package C IRGS4062DPbF IRGSL4062DPbF VCES = 600V IC = 24A, TC = 100°C G E tSC ≥ 5µs, TJ(max) = 175°C n-channel C VCE(on) typ. = 1.65V C Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to Low VCE (ON) and ...

Document Datasheet IRGSL4062DPBF Data Sheet
PDF 484.73KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 IRGSL4640DPbF
Infineon
Insulated Gate Bipolar Transistor Datasheet
2 IRGSL4B60KD1
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR Datasheet
3 IRGSL4B60KD1PbF
International Rectifier
Insulated Gate Bipolar Transistor Datasheet
4 IRGSL4B60KPBF
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR Datasheet
5 IRGSL10B60KD
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR Datasheet
6 IRGSL10B60KDPBF
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR Datasheet
More datasheet from International Rectifier
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad