IRGSL4062DPBF |
Part Number | IRGSL4062DPBF |
Manufacturer | International Rectifier |
Description | PD - 97355B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175... |
Features |
• • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package C IRGS4062DPbF IRGSL4062DPbF VCES = 600V IC = 24A, TC = 100°C G E tSC ≥ 5µs, TJ(max) = 175°C n-channel C VCE(on) typ. = 1.65V C Benefits • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and ... |
Document |
IRGSL4062DPBF Data Sheet
PDF 484.73KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRGSL4640DPbF |
Infineon |
Insulated Gate Bipolar Transistor | |
2 | IRGSL4B60KD1 |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
3 | IRGSL4B60KD1PbF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
4 | IRGSL4B60KPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
5 | IRGSL10B60KD |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
6 | IRGSL10B60KDPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |