Busque con el número de pieza junto con el fabricante o la descripción
HS817BG |
Click to view a larger image
| Part Number | HS817BG |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | The HS817 series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. AGENCY APPROVALS • • • • BSI: EN 60065, EN 6095... |
| Features |
C 4 E 3
• Rated impulse voltage (transient overvoltage) VIOTM = 6 kVpeak • Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV • Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS • Rated recurring peak voltage (repetitive) VIORM = 850 Vpeak • Creepage current resistance according to IEC 112, comparative tracking index: CTI 250 • Thickness through insulation 0.4 mm • Isolation materials according to UL 94 V-O • Pollution degree 2 (resp. IEC 664) • Climatic classification 55/100/21 (IEC 68 part 1) • Low temperature coefficient of CTR • G = leadform 10.16 mm; provid... |
| Document |
 HS817BG Data Sheet
PDF 180.79KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
|