Busque con el número de pieza junto con el fabricante o la descripción
IRG7PH35UD1MPBF |
Click to view a larger image
| Part Number | IRG7PH35UD1MPBF |
| Manufacturer | International Rectifier |
| Description | IRG7PH35UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE (ON) trench IGBT Technology Low Swit... |
| Features |
• • • • • • • • • Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for ILM Positive VCE (ON) Temperature Co-Efficient Tight Parameter Distribution Lead Free Package C VCES = 1200V IC = 25A, TC = 100°C G E TJ(max) = 150°C n-channel VCE(on) typ. = 1.9V @ IC = 20A Benefits • Device optimized for induction heating and soft switching applications • High Efficiency due to Low VCE(on), low switching losses and Ultra-low VF • Rugged transient performance for increased reliability • Excellent c... |
| Document |
 IRG7PH35UD1MPBF Data Sheet
PDF 306.47KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRG7PH35UD1-EP |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 2 | IRG7PH35UD1PbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 3 | IRG7PH35UD-EP |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | IRG7PH35UDPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 5 | IRG7PH35U-EP |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 6 | IRG7PH35U-EP |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|