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IRG7PH35U-EP |
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| Part Number | IRG7PH35U-EP |
| Manufacturer | International Rectifier |
| Description | PD - 97479 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts teste... |
| Features |
• • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Free IRG7PH35UPbF IRG7PH35U-EP C VCES = 1200V I NOMINAL = 20A G E TJ(max) = 175°C n-channel C VCE(on) typ. = 1.9V Benefits • High efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses • Rugged transient performance for increased reliability • Excellent current sharing in p... |
| Document |
 IRG7PH35U-EP Data Sheet
PDF 397.80KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRG7PH35U-EP |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 2 | IRG7PH35UD-EP |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 3 | IRG7PH35UD1-EP |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | IRG7PH35UD1MPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 5 | IRG7PH35UD1PbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 6 | IRG7PH35UDPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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