Busque con el número de pieza junto con el fabricante o la descripción
IRG7PH28UD1PBF |
Click to view a larger image
| Part Number | IRG7PH28UD1PBF |
| Manufacturer | International Rectifier |
| Description | IRG7PH28UD1PbF IRG7PH28UD1MPbF C VCES = 1200V IC = 15A, TC = 100°C G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features ... |
| Features |
Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF diode 1300Vpk repetitive transient capacity 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead-free package Benefits Device optimized for induction heating and soft switching applications High efficiency due to low VCE(ON), low switching losses and ultra-low VF Rugged transient performance for increased reliability Excellent current sharing in parallel operation Low EMI Base part number IRG7PH28UD1PbF IRG7PH28UD... |
| Document |
 IRG7PH28UD1PBF Data Sheet
PDF 409.01KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRG7PH28UD1MPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 2 | IRG7PH30K10DPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 3 | IRG7PH30K10PBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | IRG7PH35U-EP |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 5 | IRG7PH35U-EP |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 6 | IRG7PH35UD-EP |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|