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GB10NB37LZ |
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| Part Number | GB10NB37LZ |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage technology based on patented strip layout, SGS-Thomson has designed an advanced family of IGBTs with outstanding performances. The built in collector-gate zener exhibits ... |
| Features |
C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor ESD (Human Body Model) Storage T emperature Max. Operating Junction Temperature
o o o
Value CLAMPED 18 CLAMPED 20 20 60 125 0.83 4 -65 to 175 175
Un it V V V A A A W W /o C KV
o o
C C 1/8
( •) Pulse width limited by safe operating area Free Datasheet http://www.0PDF.com STGB10NB37LZ THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T yp 1.2 62.5 0.2 o o C/W C/W o C/... |
| Document |
 GB10NB37LZ Data Sheet
PDF 726.68KB |
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Desde 2024. D4U Semiconductor.
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