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13N60N |
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| Part Number | 13N60N |
| Manufacturer | KEC |
| Description | This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode ... |
| Features |
VDSS(Min.)= 600V, ID= 13A Drain-Source ON Resistance : RDS(ON)=0.56(Max.) Qg(typ.) =36nC @VGS =10V
d D E
M
P
P
T
1
2
3
MAXIMUM RATING (Tc=25
CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25 Pulsed Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Drain Power Dissipation Tc=25
)
SYMBOL VDSS VGSS ID (Note1) (Note 2) (Note 1) (Note 3) IDP EAS EAR dv/dt PD Tj Tstg RATING 600 30 13 A 32 870 22.5 4.5 215 1.72 150 -55 150 mJ mJ V/ns W W/ UNIT V V
1. Gate 2. Drain 3. Source
DIM MILLIMETERS _ 0.20 A 15.60 + _ 0.20 B 4.80 + _ 0.20 ... |
| Document |
 13N60N Data Sheet
PDF 88.32KB |
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