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2SJ139 ETC MOSFET Datasheet

RF178-02RP1-02SJ1-3977 RF Cable Assemblies


ETC
2SJ139
Part Number 2SJ139
Manufacturer ETC
Description Free Datasheet http://www.nDatasheet.com Free Datasheet http://www.nDatasheet.com ...
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Document Datasheet 2SJ139 datasheet pdf (115.24KB)
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Samtec Inc
RF178-02RP1-02SJ1-3977
RF Cable Assemblies
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Samtec Inc
RF178-02RP1-02SJ1-3977
Cable Assembly RG178 3.977m 30AWG MCX to MCX PL-F Bulk - Bulk (Alt: RF178-02RP1-02SJ1-)
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TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ104 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ104 Unit: mm · High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) · Low RDS (ON) = 40 Ω (typ.) (IDSS = −5 mA) · Complimentary to 2SK364 Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating 25 -10 400 125 -55~125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1D Weight: 0.21 g (typ.) Characteristics Symbol Test Condition Min Typ. Max Unit...
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TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ105 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ105 Unit: mm · High breakdown voltage: VGDS = 50 V · High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) · Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS = −5 mA) · Complimentary to 2SK330 · Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating 50 -10 200 125 -55~125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-4E1B Weight: 0.13 g (typ.) C...
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TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ107 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ107 Unit: mm • High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) • Low RDS (ON): RDS (ON) = 40 Ω (typ.) • Small package • Complementary to 2SK366 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range VGDS IG PD Tj Tstg 25 −10 200 125 −55~125 V mA mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC ―...
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