Busque con el número de pieza junto con el fabricante o la descripción
K4J52324QE |
Click to view a larger image
| Part Number | K4J52324QE |
| Manufacturer | Samsung |
| Description | FOR 2M x 32Bit x 8 Bank GDDR3 SDRAM The K4J52324QE is 536,870,912 bits of hyper synchronous data rate Dynamic RAM organized as 8 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performanc... |
| Features |
• 1.9V + 0.1V power supply for device operation for -BJ** • 1.9V + 0.1V power supply for I/O interface for -BJ** • 1.8V + 0.1V power supply for device operation for -BC** • 1.8V + 0.1V power supply for I/O interface for -BC** • On-Die Termination (ODT) • Output Driver Strength adjustment by EMRS • Calibrated output drive • 1.8V Pseudo Open drain compatible inputs/outputs • 8 internal banks for concurrent operation • Differential clock inputs (CK and CK) • Commands entered on each positive CK edge • CAS latency : 7, 8, 9, 10, 11, 12,13 (clock) • Programmable Burst length : 4 and 8 • Programmabl... |
| Document |
 K4J52324QE Data Sheet
PDF 1.40MB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K4J55323QF-GC |
Samsung |
256Mbit GDDR3 SDRAM |
|
| 2 | K4J55323QF-GC14 |
Samsung |
256Mbit GDDR3 SDRAM |
|
| 3 | K4J55323QF-GC15 |
Samsung |
256Mbit GDDR3 SDRAM |
|
| 4 | K4J55323QF-GC16 |
Samsung |
256Mbit GDDR3 SDRAM |
|
| 5 | K4J55323QF-GC20 |
Samsung |
256Mbit GDDR3 SDRAM |
|
| 6 | K4003 |
Toshiba Semiconductor |
2SK4003 |
|
Desde 2024. D4U Semiconductor.
|