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STP5NB100 |
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| Part Number | STP5NB100 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with... |
| Features |
) V ISO T s tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) T otal Dissipation at T c = 25 C Derating Factor Peak Diode Recovery voltage slope Insulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o o o
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value ST P5NB100 STP5NB100FP 1000 1000 ± 30 5 3.1 15.2 135 1.08 4.5 -65 to 150 150
(1) ISD ≤ 5 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un... |
| Document |
 STP5NB100 Data Sheet
PDF 124.53KB |
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Desde 2024. D4U Semiconductor.
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