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FDS6690AS Fairchild Semiconductor 30V N-Channel PowerTrench SyncFET Datasheet

FDS6690AS Small Signal Field-Effect Transistor, 10A, 30V, N-Channel, MOSFET


Fairchild Semiconductor
FDS6690AS
FDS6690AS
Part Number FDS6690AS
Manufacturer Fairchild Semiconductor
Description The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky diode using Fairchild’s mo...
Features
• 10 A, 30 V. RDS(ON) max= 12 mΩ @ VGS = 10 V RDS(ON) max= 15 mΩ @ VGS = 4.5 V


• Includes SyncFET Schottky diode Low gate charge (16nC typical) High performance trench technology for extremely low RDS(ON)
• High power and current handling capability Applications
• DC/DC converter
• Low side notebooks D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
  – Continuous
  – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ±20 (Note 1a) Units V V A W 10 50 2.5 1.2 1
  –55 to +150 Power D...

Document Datasheet FDS6690AS datasheet pdf (747.25KB)
Distributor Distributor
Rochester Electronics
Stock 101356 In Stock
Price
1000 units: 0.347 USD
500 units: 0.3674 USD
100 units: 0.3837 USD
25 units: 0.4 USD
1 units: 0.4082 USD
BuyNow BuyNow BuyNow (Manufacturer a Fairchild Semiconductor Corporation)




FDS6690AS Distributor

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FDS6690AS
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500 units: 720 KRW
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1 units: 1250 KRW
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FDS6690AS
N채널 30V 10A(Ta) 2.5W(Ta) 표면 실장 8-SOIC
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DigiKey

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Fairchild Semiconductor Corporation
FDS6690AS
Small Signal Field-Effect Transistor, 10A, 30V, N-Channel, MOSFET
1000 units: 0.347 USD
500 units: 0.3674 USD
100 units: 0.3837 USD
25 units: 0.4 USD
1 units: 0.4082 USD
Distributor
Rochester Electronics

101356 In Stock
BuyNow BuyNow
part
Fairchild Semiconductor Corporation
FDS6690AS
275 units: 0.6338 USD
50 units: 0.7313 USD
1 units: 2.4375 USD
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Quest Components

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FDS6690AS
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Chip 1 Exchange

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onsemi
FDS6690AS
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Bristol Electronics

25 In Stock
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Fairchild Semiconductor Corporation
FDS6690AS
IN STOCK SHIP TODAY
1000 units: 0.5 USD
100 units: 0.58 USD
1 units: 0.77 USD
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Component Electronics, Inc

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onsemi
FDS6690AS
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FDS6690AS Similar Datasheet

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Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET
This N Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 10 A, 30 V. RDS(ON) = 0.0135 Ω @ VGS = 10 V RDS(ON) = 0.0200 Ω @ VGS = 4.5 V. Optimized for use in switching DC/DC converters with PWM controllers. Very fast switching . Low gate charge (Qg typ = 13 nC). SOT-23 SuperSOTTM-6 SuperS...
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This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • 11 A, 30 V. RDS(ON) = 12.5 mΩ @ VGS = 10 V RDS(ON) = 17.0 mΩ @ VGS = 4.5 V • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(ON) • High power and current handling capability DD DDDD DD SO-8 Pin 1 SO-8 SS SS SS GG 54 63 72 81 Absolute Maximum Ratings TA=...
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This N-Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • 11 A, 30 V. RDS(ON) = 12.5 mΩ @ VGS = 10 V RDS(ON) = 17.0 mΩ @ VGS = 4.5 V • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(ON) • High power and current handling capability DDDD DD DD SO-8 Pin 1 SO-8 SS SS SS GG Absolute Maximum Ratings TA=25oC unless otherwis...
FDS6690AS
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ON Semiconductor
N-Channel MOSFET
The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky diode using ON Semiconductor’s monolithic SyncFET technology. The performance of the FDS6690AS as the low-side switch in a synchronous rectifier is close to the performance of the FDS6690A in parallel with a Schottky diode. • 10 A, 30 V. RDS(ON) max= 12 mΩ @ VGS = 10 V RDS(ON) max= 15 mΩ @ VGS = 4.5 V • Includes SyncFET Schottky diode • Low gate charge (16nC typical) • High performance trench technology for extremely low ...
FDS6690S
manufacturer
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The FDS6690S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6690S as the low-side switch in a synchronous rectifier is close to the performance of the FDS6690A in parallel with a Schottky diode. Features • 10 A, 30 V. RDS(ON) = 0.016 Ω @ V GS = 10 V RDS(ON) = 0.024 Ω @ V GS = 4.5 V • Includes SyncFET Schottky diode • Low gate charge (11 nC typical) • High performance trench technology for extremely low...




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