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K3209 |
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| Part Number | K3209 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK3209 Silicon N Channel MOS FET High Speed Power Switching ADE-208-759(Z) Target Specification 1st. Edition December 1998 Features • Low on-resistance R DS =35mΩ typ. • High speed switching • 4V ga... |
| Features |
• Low on-resistance R DS =35mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO –220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 Free Datasheet http://www.Datasheet-PDF.com/ 2SK3209 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 150 ±20 25 100 25 25 46 35 150 –55 to... |
| Document |
 K3209 Data Sheet
PDF 41.24KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K320 |
Hitachi Semiconductor |
2SK320 |
|
| 2 | K3207EC450 |
IXYS |
Medium Voltage Thyristor |
|
| 3 | K3207EC480 |
IXYS |
Medium Voltage Thyristor |
|
| 4 | K3207EC520 |
IXYS |
Medium Voltage Thyristor |
|
| 5 | K3216-01 |
Fuji Electric |
2SK3216-01 |
|
| 6 | K3228 |
Hitachi Semiconductor |
2SK3228 |
|
Desde 2024. D4U Semiconductor.
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