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HGTP10N50E1D |
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| Part Number | HGTP10N50E1D |
| Manufacturer | Intersil Corporation |
| Description | The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such... |
| Features |
• 10A, 400V and 500V • VCE(ON): 2.5V Max. • TFALL: 1µs, 0.5µs • Low On-State Voltage • Fast Switching Speeds • High Input Impedance • Anti-Parallel Diode Applications • Power Supplies • Motor Drives • Protective Circuits Terminal Diagram N-CHANNEL ENHANCEMENT MODE C Description The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. They feature a discrete anti-parallel diode that shunts current around the... |
| Document |
 HGTP10N50E1D Data Sheet
PDF 37.02KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | HGTP10N50E1 |
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N-Channel IGBT |
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| 2 | HGTP10N50C1 |
Intersil Corporation |
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| 3 | HGTP10N50C1D |
Intersil Corporation |
N-Channel IGBT |
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| 4 | HGTP10N50F1D |
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| 5 | HGTP10N120BN |
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| 6 | HGTP10N120BN |
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Desde 2024. D4U Semiconductor.
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