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HGTP10N40F1D |
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| Part Number | HGTP10N40F1D |
| Manufacturer | Intersil Corporation |
| Description | The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conductio... |
| Features |
• 10A, 400V and 500V • Latch Free Operation • Typical Fall Time < 1.4µs • High Input Impedance • Low Conduction Loss • Anti-Parallel Diode • tRR < 60ns Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic. IGBTs are id... |
| Document |
 HGTP10N40F1D Data Sheet
PDF 34.04KB |
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Desde 2024. D4U Semiconductor.
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