HGTP10N40C1 |
Part Number | HGTP10N40C1 |
Manufacturer | Intersil Corporation |
Description | The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for hig... |
Features |
• 10A and 12A, 400V and 500V • VCE(ON): 2.5V Max. • TFI: 1µs, 0.5µs • Low On-State Voltage • Fast Switching Speeds • High Input Impedance • No Anti-Parallel Diode Applications HGTP-TYPES JEDEC TO-220AB • Power Supplies • Motor Drives • Protection Circuits COLLECTOR (FLANGE) EMITTER COLLECTOR GATE Description The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor driv... |
Document |
HGTP10N40C1 Data Sheet
PDF 38.89KB |
Similar Datasheet
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