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HGTD7N60A4S |
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| Part Number | HGTD7N60A4S |
| Manufacturer | Intersil Corporation |
| Description | TM HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4 Data Sheet June 2000 File Number 4826.2 600V, SMPS Series N-Channel IGBT The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated h... |
| Features |
of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49331.
Features
• >100kHz Operation at 390V, 7A • 200kHz Operation at 390V, 5A • 600V Switching SOA Capability • Typ... |
| Document |
 HGTD7N60A4S Data Sheet
PDF 168.07KB |
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Desde 2024. D4U Semiconductor.
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