HGTD10N40F1 |
Part Number | HGTD10N40F1 |
Manufacturer | Intersil Corporation |
Description | The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such a... |
Features |
• 10A, 400V and 500V • VCE(ON) 2.5V Max. • TFALL ≤1.4µs • Low On-State Voltage • Fast Switching Speeds • High Input Impedance Applications • Power Supplies • Motor Drives • Protective Circuits COLLECTOR (FLANGE) GATE EMITTER HGTD10N40F1S, HGTD10N50F1S JEDEC TO-252AA Description The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated circuits. PAC... |
Document |
HGTD10N40F1 Data Sheet
PDF 33.07KB |
Similar Datasheet
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