Busque con el número de pieza junto con el fabricante o la descripción
TC58NVG6T2FTA00 |
Click to view a larger image
| Part Number | TC58NVG6T2FTA00 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | The TC58NVG6T2FTA00 is a single 3.3 V 64 Gbit (79,054,700,544 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 1024) bytes 258 pages 4156 block... |
| Features |
Organization Memory cell array Register Page size Block size TC58NVG6T2FTA00 9216 1047.1171875K 8 9216 8 9216 bytes (2064K 258K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Page Program, Multi Block Erase, Multi Page Read Mode control Serial input/output Command control Number of valid blocks Min 4000 blocks Max 4156 blocks Power supply VCC 2.7 V to 3.6 V Access time Cell array to register Serial Read Cycle Program/Erase time Auto Page Program Auto Block Erase Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby 110 s max... |
| Document |
 TC58NVG6T2FTA00 Data Sheet
PDF 232.87KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TC58NVG6D2GTA00 |
Toshiba |
64 GBIT (8G X 8 BIT) CMOS NAND E2PROM |
|
| 2 | TC58NVG6DDJTA00 |
Toshiba |
64 GBIT (8G X 8 BIT) CMOS NAND E2PROM |
|
| 3 | TC58NVG0S3AFT00 |
Toshiba |
1 GBit CMOS NAND EPROM |
|
| 4 | TC58NVG0S3AFT05 |
Toshiba |
1 GBit CMOS NAND EPROM |
|
| 5 | TC58NVG0S3ETA00 |
Toshiba |
1 GBIT (128M X 8 BIT) CMOS NAND E2PROM |
|
| 6 | TC58NVG0S3HBAI4 |
Toshiba |
1G BIT (128M x 8-BIT) CMOS NAND E2PROM |
|
Desde 2024. D4U Semiconductor.
|