ME75N75T |
Part Number | ME75N75T |
Manufacturer | Matsuki |
Description | The ME75N75T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to mi... |
Features |
● RDS(ON)≦10mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS PIN CONFIGURATION (TO-220) Top View ● Power Management ● DC/DC Converter ● Load Switch e Ordering Information: ME75N75T (Pb-free) ME75N75T-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current* Pulsed Drain Current Maximum Power Dissipation TC=25℃ TC=70℃ TC=25℃ TC=70℃ Symbol VDSS VGSS ID IDM PD TJ, Tstg RθJC Limit 75 ±25 93 78... |
Document |
ME75N75T Data Sheet
PDF 845.75KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | ME75N75T-G |
Matsuki |
N-Channel MOSFET | |
2 | ME75N80C |
Matsuki |
N-Channel Enhancement Mode MOSFET | |
3 | ME75N80C-G |
Matsuki |
N-Channel Enhancement Mode MOSFET | |
4 | ME75N80ED |
Matsuki |
N-Channel Enhancement Mode MOSFET | |
5 | ME75N80ED-G |
Matsuki |
N-Channel Enhancement Mode MOSFET | |
6 | ME700802 |
Powerex Powers |
Three-Phase Diode Bridge Modules (20 Amperes/800 Volts) |