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CS2N60F |
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| Part Number | CS2N60F |
| Manufacturer | HUAJING |
| Description | CS2N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche ener... |
| Features |
l Fast Switching l Low ON Resistance(Rdson≤4.5Ω) l Low Gate Charge
(Typical Data:8.5nC)
l Low Reverse transfer capacitances(Typical:5.4pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（ Tc= 25℃ unless otherwise specified） ：
Symbol VDSS ID IDM VGS EAS EAR IAR
a1
Parameter
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage
Rating 600 2.0 1.45 8.0 ±30 80 6.4 1.1 5 24 0.192 150， –55 to 150 300 Units V A A A V mJ mJ A V/ns W W/℃ ℃ ℃ a2 a1 Single Pul... |
| Document |
 CS2N60F Data Sheet
PDF 335.55KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | CS2N60 |
LZG |
N-CHANNEL MOSFET |
|
| 2 | CS2N60 |
ETC |
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| 3 | CS2N60A3H |
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| 4 | CS2N60A4H |
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| 5 | CS2N60A4T |
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| 6 | CS2N60A7H |
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|
Desde 2024. D4U Semiconductor.
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