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| Part Number | K3880 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | 2SK3880 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) 2SK3880 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward tran... |
| Features |
bient Symbol Rth (ch-c) Rth (ch-a) Max 1.56 41.6 Unit 1 °C/W °C/W 3
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 16.1 mH, RG = 25 Ω, IAR = 6.5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.
1
2005-01-18
Free Datasheet http://www.datasheet4u.com/
2SK3880
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Drain-source breakdown voltage Drain cutoff current Drain-source bre... |
| Document |
 K3880 Data Sheet
PDF 277.53KB |
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