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K4106 |
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| Part Number | K4106 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | 2SK4106 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4106 Switching Regulator Applications Unit: mm • • • • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) High for... |
| Features |
/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal re... |
| Document |
 K4106 Data Sheet
PDF 194.45KB |
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