MEM2309 |
Part Number | MEM2309 |
Manufacturer | MicrOne |
Description | MEM2309SGSeries P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device parti... |
Features |
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MEM2309
Thermal Characteristics:
Parameter Thermal Resistance, Junction-to-Ambient
3
Symbol RθJA
Ratings 50
Unit ! /W
Electrical Characteristics:
MEM2309SG
Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage
Gate-Body Leakage Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Forward Transconductance Drain-Source Diode Forward Current Source-drain (diode forward) voltage
Symbol Test Condition Static Characteristics VGS=0V, V(BR)DSS ID=-250uA VDS= VGS, VGS(th) ID=-250uA VDS=0Vÿ VGS=20V IGSS VDS=0Vÿ VGS=-20V VDS=-24V IDSS VGS=0V RDS(ON)1 VGS=... |
Document |
MEM2309 Data Sheet
PDF 869.30KB |
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