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2SC2625 |
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| Part Number | 2SC2625 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Ultrasonic gen... |
| Features |
ARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA ; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
ICBO
Collector Cutoff Current
VCB= 450V ; IE=0
IEBO
Emitter Cutoff Current
VEB= 7V; IC=0
hFE
DC Current Gain
IC= 4A ; VCE= 5V
2SC2625
MIN ... |
| Document |
 2SC2625 Data Sheet
PDF 216.15KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC2620 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SC2621 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 3 | 2SC2621 |
Sanyo Electric |
NPN Triple Diffused Planar Silicon Transistor |
|
| 4 | 2SC2624 |
Inchange Semiconductor |
Power Transistor |
|
| 5 | 2SC2625 |
Fuji Electric |
TRIPLE TRANSISTOR |
|
| 6 | 2SC2625 |
UTC |
NPN EPITAXIAL SILICON TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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