WFW20N50 |
Part Number | WFW20N50 |
Manufacturer | Wisdom |
Description | This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche ... |
Features |
■ ■ ■ ■ ■ RDS(on) (Max 0.26 Ω )@VGS=10V Gate Charge (Typical 90nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain ● 1. Gate { ▲ ● ● { 3. Source General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ba... |
Document |
WFW20N50 Data Sheet
PDF 762.39KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | WFW20N60 |
Wisdom technologies |
N-Channel MOSFET | |
2 | WFW20N60W |
Winsemi |
Silicon N-Channel MOSFET | |
3 | WFW24N50W |
Winsemi |
Silicon N-Channel MOSFET | |
4 | WFW24N60 |
Wisdom technologies |
N-Channel MOSFET | |
5 | WFW28N60 |
Wisdom technologies |
N-Channel MOSFET | |
6 | WFW10N80 |
Wisdom technologies |
N-Channel MOSFET |