2SB1001 |
Part Number | 2SB1001 |
Manufacturer | Kexin |
Description | SMD Type Silicon PNP Epitaxial 2SB1001 Transistors Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter t... |
Features |
Low frequency power amplifier
Absolute Maximum Ratings Ta = 25
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current peak collector current Collector power dissipation Junction temperature Storage temperature *1. PW 10 ms; d 0.02. Symbol VCBO VCEO VEBO IC ICP *1 PC *2 Tj Tstg Rating -20 -16 -6 -2 -3 1 150 -55 to +150 Unit V V V A A W
*2. Value on the alumina ceramic board (12.5 X 20 X 0.7 mm)
Electrical Characteristics Ta = 25
Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown vo... |
Document |
2SB1001 Data Sheet
PDF 67.84KB |
Similar Datasheet
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---|---|---|---|---|
1 | 2SB1000 |
Hitachi Semiconductor |
LOW FREQUENCY POWER AMPLIFIER | |
2 | 2SB1000A |
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LOW FREQUENCY POWER AMPLIFIER | |
3 | 2SB1001 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor | |
4 | 2SB1001 |
Renesas |
Silicon PNP Transistor | |
5 | 2SB1002 |
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6 | 2SB1002 |
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Silicon PNP Transistor |