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AP2322GN-HF |
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| Part Number | AP2322GN-HF |
| Manufacturer | Advanced Power Electronics |
| Description | Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is widely used for co... |
| Features |
ent
3
Value 150
Unit ℃/W 1 201009173
Data and specifications subject to change without notice
Free Datasheet http://www.datasheet4u.com/
AP2322GN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=4.5V, ID=1.6A VGS=2.5V, ID=1A VGS=1.8V, ID=0.3A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge
2
Min. 20 0.2... |
| Document |
 AP2322GN-HF Data Sheet
PDF 114.22KB |
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Desde 2024. D4U Semiconductor.
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