Busque con el número de pieza junto con el fabricante o la descripción
AP2306GN-HF |
Click to view a larger image
| Part Number | AP2306GN-HF |
| Manufacturer | Advanced Power Electronics |
| Description | Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is widely used for a... |
| Features |
Unit ℃/W
Data and specifications subject to change without notice
1 200902044
Free Datasheet http://www.datasheet4u.com/
AP2306GN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=5.5A VGS=4.5V, ID=5.3A VGS=2.5V, ID=2.6A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge
2
Min. 20 0.5 -
Typ. 13 8.... |
| Document |
 AP2306GN-HF Data Sheet
PDF 101.81KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AP2306GN-HF-3 |
Advanced Power Electronics |
N-channel Enhancement-mode Power MOSFET |
|
| 2 | AP2306GN |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 3 | AP2306AGEN |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 4 | AP2306AGEN-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 5 | AP2306AGN |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 6 | AP2306AGN-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE |
|
Desde 2024. D4U Semiconductor.
|