2SD2651 |
Part Number | 2SD2651 |
Manufacturer | Hitachi |
Description | 2SD2651 Silicon NPN Epitaxial High Voltage Amplifier ADE-208-976 (Z) 1st. Edition October 2000 Features • High breakdown voltage VCEO = -300V min Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3... |
Features |
• High breakdown voltage VCEO = -300V min Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 Free Datasheet http://www.datasheet4u.com/ 2SD2651 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 300 300 5 50 750 150 -55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector cutoff current Symbol I CBO I CEO Emitter cutoff current Base to emitter voltage DC ... |
Document |
2SD2651 Data Sheet
PDF 53.49KB |
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