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TPC8129 |
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| Part Number | TPC8129 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | MOSFETs Silicon P-Channel MOS (U-MOS) TPC8129 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2. Features (1) Small footprint due to a small and thin package (2) Low dra... |
| Features |
(1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 17 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) (4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.2 mA)
3. Packaging and Internal Circuit
TPC8129
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
SOP-8
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Single-pulse avala... |
| Document |
 TPC8129 Data Sheet
PDF 259.92KB |
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Desde 2024. D4U Semiconductor.
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