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NE3521M04 |
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| Part Number | NE3521M04 |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | Summary First edition issued Rev. 1.00 Date Mar 19, 2013 Page - All trademarks and registered trademarks are the property of their respective owners. C-1 Free Datasheet http://www.datasheet4u.com/... |
| Features |
R09DS0058EJ0100 Rev.1.00 Mar 19, 2013
• Low noise figure and high associated gain: NF = 0.85 dB TYP., Ga = 11 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 20 GHz NF = 0.9 dB TYP., Ga = 10.5 dB TYP. @VDS = 2 V, ID = 6mA, f = 20 GHz (Reference Value) • Flat-lead 4-pin thin-type super minimold (M04) package APPLICATIONS • DBS LNB gain-stage, Mix-stage • Low noise amplifier for microwave communication system ORDERING INFORMATION Part Number NE3521M04-T2 Order Number NE3521M04-T2-A Package Quantity Flat-lead 4-pin 3 kpcs/reel thin-type super minimold (M04) 15 kpcs/reel (Pb-Free) Marking V86 Supplying F... |
| Document |
 NE3521M04 Data Sheet
PDF 431.07KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NE3520S03 |
Renesas |
N-Channel GaAs HJ-FET |
|
| 2 | NE350184C |
CEL |
HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
|
| 3 | NE3503M04 |
California Eastern Labs |
C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER |
|
| 4 | NE3505M04 |
California Eastern Labs |
HETERO JUNCTION FIELD EFFECT TRANSISITOR |
|
| 5 | NE3508M04 |
California Eastern Labs |
HETERO JUNCTION FIELD EFFECT TRANSISITOR |
|
| 6 | NE3509M04 |
CEL |
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
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Desde 2024. D4U Semiconductor.
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