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NE3520S03 |
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| Part Number | NE3520S03 |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | Summary First edition issued Rev. 1.00 Date Oct 18, 2011 Page - All trademarks and registered trademarks are the property of their respective owners. C-1 Free Datasheet http://www.datasheet4u.com/... |
| Features |
• Low noise figure and high associated gain: NF = 0.65 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz, VDS = 2 V, ID = 10 mA • K band Micro-X plastic (S03) package R09DS0029EJ0100 Rev.1.00 Oct 18, 2011 APPLICATIONS • 20 GHz band DBS LNB • Other K band communication system ORDERING INFORMATION Part Number NE3520S03-T1C Order Number NE3520S03-T1C-A Package S03 package (Pb-Free) Quantity 2 kpcs/reel Marking J Supplying Form • Embossed tape 8 mm wide • Pin 4 (Gate) face the perforation side of the tape NE3520S03-T1D NE3520S03-T1D-A 10 kpcs/reel Remark To order evaluation samples, please contact y... |
| Document |
 NE3520S03 Data Sheet
PDF 232.81KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NE3521M04 |
Renesas |
N-Channel GaAs HJ-FET |
|
| 2 | NE350184C |
CEL |
HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
|
| 3 | NE3503M04 |
California Eastern Labs |
C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER |
|
| 4 | NE3505M04 |
California Eastern Labs |
HETERO JUNCTION FIELD EFFECT TRANSISITOR |
|
| 5 | NE3508M04 |
California Eastern Labs |
HETERO JUNCTION FIELD EFFECT TRANSISITOR |
|
| 6 | NE3509M04 |
CEL |
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
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Desde 2024. D4U Semiconductor.
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