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NE3519M04 |
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| Part Number | NE3519M04 |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | PreliminaryData Sheet NE3519M04 N-channel GaAs HJ-FET, L to C Band Low Noise FEATURES R09DS0008EJ0100 Rev.1.00 Oct 21, 2010 Amplifier • Low noise figure and high associated gain NF = 0.40 dB TYP., ... |
| Features |
R09DS0008EJ0100 Rev.1.00 Oct 21, 2010 Amplifier
• Low noise figure and high associated gain NF = 0.40 dB TYP., Ga = 18.5 dB TYP. @VDS = 2 V, ID = 10 mA, f = 2 GHz • Flat-lead 4-pin thin-type super minimold (M04) package APPLICATIONS • Satellite radio (SDARS, etc.) • Low noise amplifier for microwave communication system ORDERING INFORMATION Part Number NE3519M04-T2 NE3519M04-T2B Order Number NE3519M04-T2-A NE3519M04-T2B-A Package Flat-lead 4-pin thin-type super minimold (M04) (Pb-Free) Quantity 3 kpcs/reel 15 kpcs/reel Marking V85 Supplying Form • Embossed tape 8 mm wide • Pin 1 (Source),... |
| Document |
 NE3519M04 Data Sheet
PDF 244.84KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NE3510M04 |
CEL |
HETERO JUNCTION FIELD EFFECT TRANSISTOR |
|
| 2 | NE3511S02 |
CEL |
X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
|
| 3 | NE3512S02 |
CEL |
HETERO JUNCTION FIELD EFFECT TRANSISTOR |
|
| 4 | NE3513M04 |
Renesas |
N-Channel GaAs HJ-FET |
|
| 5 | NE3514S02 |
CEL |
K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
|
| 6 | NE3516S02 |
Renesas |
N-Channel GaAs HJ-FET |
|
Desde 2024. D4U Semiconductor.
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