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UPD5759T6J |
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| Part Number | UPD5759T6J |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | R09DS0018EJ0100 Rev.1.00 Apr 18, 2011 The μPD5759T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits ... |
| Features |
• Low noise • • • • • • : NV = −98 dBV TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ : NV = −99 dBV TYP. @VDD = 2.0 V, Cin = 5 pF, RL = 2.2 kΩ High gain : GV = +9.0 dB TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +11.0 dB TYP. @VDD = 2.0 V, Cin = 5 pF, RL = 2.2 kΩ Low input capacitance : Cinput = 2.0 pF TYP. @VDD = 2.0 V, RL = 2.2 kΩ Low consumption current : IDD = 310 μA TYP. @VDD = 2.0 V, RL = 2.2 kΩ High-density surface mounting : 3-pin thin-type lead-less minimold (1.2 × 1.0 × 0.33 mm) Built-in the capacitor for RF noise immunity High ESD voltage APPLICATIONS • Microphone, Sensor etc. ... |
| Document |
 UPD5759T6J Data Sheet
PDF 216.59KB |
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