UPD5756T6N Renesas SiGe BiCMOS Datasheet. existencias, precio

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UPD5756T6N

Renesas
UPD5756T6N
UPD5756T6N UPD5756T6N
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Part Number UPD5756T6N
Manufacturer Renesas (https://www.renesas.com/)
Description R09DS0026EJ0100 Rev.1.00 Oct 04, 2011 The μPD5756T6N is a low noise wideband amplifier IC with the through function mainly designed for the digital TV application. This IC exhibits low noise figure ...
Features
• Low voltage operation
• Low current consumption




• : : : Operation frequency : Low noise : Low distortion : Low insertion loss : High-density surface mounting : VCC = 3.1 to 3.5 V (3.3 V TYP.) ICC1 = 25 mA TYP. @VCC = 3.3 V (LNA-mode) ICC2 = 1 μA MAX. @VCC = 3.3 V (Bypass-mode) f = 40 to 1 000 MHz NF = 3.2 dB TYP. @f = 1 000 MHz (LNA-mode) IIP3 = +9 dBm TYP. @f1 = 500 MHz, f2 = 505 MHz (LNA-mode) Lins = 1.7 dB TYP. @f = 1 000 MHz (Bypass-mode) 6-pin plastic TSON (T6N) package (1.5 × 1.5 × 0.37 mm) APPLICATIONS
• Low noise amplifier for the digital TV system, etc. ORDERING INFORMATIO...

Document Datasheet UPD5756T6N Data Sheet
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