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2SC3123 |
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| Part Number | 2SC3123 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Conversion Gain Gce = 23dB TYP. ·Low Reverse Transfer Capacitance Cre = 0.4pF TYP. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for... |
| Features |
ollector Cutoff Current
VCB= 25V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
20
V
0.1 μA
1.0 μA
hFE
DC Current Gain
IC= 5mA ; VCE= 10V
40
300
Cre
Reverse Transfer Capacitance
IE= 0 ; VCB= 10V;f= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC= 5mA ; VCE= 10V
0.4 0.5 pF
900 1400
MHz
Gce
Conversion Gain
NF
Noise Figure
VCC= 12V;f= 200MHz,fL= 260MHz 20
23
dB
VCC= 12V;f= 200MHz,fL= 260MHz
3.8 5.5 dB
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented onl... |
| Document |
 2SC3123 Data Sheet
PDF 187.41KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3120 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SC3120 |
Kexin |
Silicon NPN Transistor |
|
| 3 | 2SC3121 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC3121 |
Kexin |
Silicon NPN Transistor |
|
| 5 | 2SC3121 |
Inchange Semiconductor |
Silicon NPN RF Transistor |
|
| 6 | 2SC3122 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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