2SB1562 Inchange Semiconductor Silicon PNP Power Transistor Datasheet. existencias, precio

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2SB1562

Inchange Semiconductor
2SB1562
2SB1562 2SB1562
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Part Number 2SB1562
Manufacturer Inchange Semiconductor
Description ·High DC Current Gain- : hFE= 300~1000@ (VCE= -5V , IC= -0.5A) ·Low Saturation Voltage- : VCE(sat)= -0.5V(TYP)@ (IC= -2A, IB= -20mA) ·Minimum Lot-to-Lot variations for robust device performance and re...
Features ector-Emitter Saturation Voltage IC= -2A; IB= -20mA VBE(on) Base-Emitter On Voltage IC= -0.5A ; VCE= -5V ICBO Collector Cutoff Current VCB= -60V ; IE=0 IEBO Emitter Cutoff Current VEB= -7V; IC=0 hFE-1 DC Current Gain IC= -0.5A ; VCE= -5V hFE-2 DC Current Gain IC= -2A ; VCE= -5V COB Output Capacitance IE=0 ; VCB= -10V;ftest= 1.0MHz MIN TYP. MAX UNIT -1.5 V -1.0 V -100 μA -100 μA 300 1000 100 60 pF Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as ...

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