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2SB1182D |
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| Part Number | 2SB1182D |
| Manufacturer | SeCoS |
| Description | 2SB1182D PNP Silicon Elektronische Bauelemente General Purpose Transistor TO-252 6. 50Ć0. 15 FEATURES The 2SB1182DX is designed for medium power amplifier application 9. 70Ć0. 20 0. 75Ć0. 10 5. 30Ć... |
| Features |
The 2SB1182DX is designed for medium power amplifier application
9. 70Ć0. 20 0. 75Ć0. 10
5. 30Ć0. 10
2. 30Ć0. 10 0. 51Ć0. 05
C Low collector saturation voltage: VCE(sat)=-0.5V (Typ.)
RoHS Compliant Product
5
0. 51Ć0. 10 1. 20 0Ć0. 10 5 0. 80Ć0. 10 5
1. 60Ć0. 15
2. 30Ć0. 10
0. 60Ć 0. 10
0 Ć9 0. 51
B
O
C
E
2. 30Ć0. 10
* MAXIMUM RATINGS* TA=25 C unless otherwise noted
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current -Pulse,Pw=100mS Collector Dissipation Junction and Storage Temperature Symbol VCBO VCEO VE... |
| Document |
 2SB1182D Data Sheet
PDF 281.35KB |
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