2SB1120 |
Part Number | 2SB1120 |
Manufacturer | Kexin |
Description | SMD Type Transistors PNP Epitaxial Planar Silicon Transistors 2SB1120 Features Low collector-to-emitter saturation voltage : VCE(sat)max=-0.45V. Large current capacity : IC=-2.5A, ICP=-5A. Very smal... |
Features |
Low collector-to-emitter saturation voltage : VCE(sat)max=-0.45V. Large current capacity : IC=-2.5A, ICP=-5A. Very small size making it easy to provide highdensity, small-sized hybrid IC’ s.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -20 -10 -7 -2.5 -5 500 150 -55 to +150 Unit V V V A A mW
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutof... |
Document |
2SB1120 Data Sheet
PDF 68.99KB |
Similar Datasheet
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1 | 2SB1120 |
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2 | 2SB1121 |
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3 | 2SB1121 |
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