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IXFH17N80Q |
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| Part Number | IXFH17N80Q |
| Manufacturer | IXYS |
| Description | HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg IXFH 17N80Q IXFT 17N80Q VDSS ID25 RDS(on) = 800 V = 17 A = 0.60 Ω trr ≤ 250 ns Preliminary Data She... |
| Features |
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Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C
Characteristic Values Min. Typ. Max. 800 2.0 4.5 ±100 25 1 0.60 V V nA µA mA Ω
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IXYS advanced low Qg process International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated Fast switching Molding epoxies meet UL 94 V-0 flammability classification
Advantages
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VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Easy to mount Space savi... |
| Document |
 IXFH17N80Q Data Sheet
PDF 582.17KB |
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Desde 2024. D4U Semiconductor.
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