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2SB900 |
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| Part Number | 2SB900 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= -50V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0(Max.) @IC= -2A ·Wide area of safe operation ·Good Linearity of hFE ·Minimum Lot-to-Lot v... |
| Features |
ER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
V(BR)CBO Collector-Base breakdown voltage IC=-1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(on) Base-Emitter On Voltage
IC=- 2A; VCE=-4V
ICBO
Collector Cutoff Current
VCB= -50V; IE= 0
ICEO
Collector Cutoff Current
VCE= -50V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -1A ; VCE= -4V
fT
Current-Gain—Bandwidth Product IC=-0.5A ; VCE= -10V
MIN TYP. MAX UNIT
-50
V
-50
V
-6
V
-... |
| Document |
 2SB900 Data Sheet
PDF 183.99KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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