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2SB966 |
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| Part Number | 2SB966 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Low Collector Saturation Voltage : VCE(sat)= -0.65V(Typ)@IC= -5.0A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Complement to Type 2SD1289 ·100% avalanche tested ·Minimum Lot-to-Lot ... |
| Features |
ONDITIONS
VCE(sat)NOTE Collector-Emitter Saturation Voltage
IC= -5.0A; IB= -0.5A
VBE(sat)NOTE Base-Emitter Saturation Voltage
IC= -5.0A; IB= -0.5A
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
hFE1NOTE
DC Current Gain
IC= -1A; VCE= -5V
MIN TYP MAX UNIT
-0.65 -1.5
V
-1.25 -2.0
V
-50
μA
-50
μA
60
320
hFE2NOTE
DC Current Gain
IC= -50mA; VCE= -5V
40
fT
Transition frequency
VCE=-5V ,IC=-1A
65
MHz
Cob
Collector output capacitance
VCB=-10V ,IE=0,f=1MHz
200
pF
NOTE:Pulse test PW≤350us,duty cycle ≤2%
hFE1 Classificat... |
| Document |
 2SB966 Data Sheet
PDF 205.34KB |
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Desde 2024. D4U Semiconductor.
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