2SC3686 Inchange Semiconductor Silicon NPN Power Transistors Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

2SC3686

Inchange Semiconductor
2SC3686
2SC3686 2SC3686
zoom Click to view a larger image
Part Number 2SC3686
Manufacturer Inchange Semiconductor
Description ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operatio...
Features ; IB = 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.2A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.2A ICES Collector Cutoff Current VCE= 1500V; RBE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 5V Switching Times tstg Storage Time tf Fall Time IC= 4A, IB1= 0.8A; IB2= -1.6A 2SC3686 MIN TYP. MAX UNIT 800 V 5.0 V 1.5 V 1 mA 1 mA 8 3.0 μs 0.2 μs Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presente...

Document Datasheet 2SC3686 Data Sheet
PDF 198.37KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2SC3680
Sanken electric
Silicon NPN Transistor Datasheet
2 2SC3680
SavantIC
SILICON POWER TRANSISTOR Datasheet
3 2SC3680
Inchange Semiconductor
Silicon NPN Power Transistors Datasheet
4 2SC3685
Sanyo Semicon Device
NPN Transistor Datasheet
5 2SC3685
SavantIC
SILICON POWER TRANSISTOR Datasheet
6 2SC3685
Inchange Semiconductor
Silicon NPN Power Transistors Datasheet
More datasheet from Inchange Semiconductor
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad